A two-dimensional ferroelectric ferromagnetic half semiconductor in a VOF monolayer
نویسندگان
چکیده
Two-dimensional (2D) multiferroics have been casted great attention owing to their promising prospects for miniaturized electronic and memory devices.Here, we proposed a highly stable 2D multiferroic, VOF monolayer, which is an intrinsic ferromagnetic half semiconductor with large spin polarization ~2 $\mu_{B}/V$ atom significant uniaxial magnetic anisotropy along a-axis (410 $\mu eV/V$ atom). Meanwhile, it shows excellent ferroelectricity spontaneous 32.7 C/cm^{2}$ moderate energy barrier (~43 meV/atom) between two ferroelectric states, can be ascribed the Jahn-Teller distortion.Moreover, monolayer harbors ultra-large negative Poisson's ratio in in-plane direction (~-0.34). The Curie temperature evaluated from Monte Carlo simulations based on Ising model about 215 K, enhanced room under -4% compressive biaxial strain.The combination of ferromagnetism could provide platform future study multiferroic effects next-generation multifunctional nanoelectronic device applications.
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2021
ISSN: ['2050-7526', '2050-7534']
DOI: https://doi.org/10.1039/d1tc02238e